Charles M. McKenna

Nessuna posizione attualmente

78 anni

Health Services

Electronic Technology

Profilo

Charles M.
McKenna has been President and Chief Executive Officer of Ibis Technology Corp.
since November 20, 2006.
He joined Ibis Technology as Executive Vice President and Chief Operating Officer in July 2005.
Prior to joining Ibis Technology, Dr. McKenna was Executive Vice President of Automation Systems and Chief Technology Officer for Brooks Automation, Inc. from July 2000 to July 2003 and Chief Operating Officer and Chief Technology Officer of Varian Semiconductor Equipment Associates from April 1999 to January 2000.
He was General Manager of the Ion Implant Business for Varian Semiconductor Equipment Associates for 10 years.
Dr. McKenna held various management and engineering positions at IBM and Hughes Research Lab.
He received a Bachelor's degree in Physics from St. Joseph's University and a PhD in Nuclear Physics from Florida State University.

Precedenti posizioni note di Charles M. McKenna

Società	Posizione	Fine
Ibis Technology Corp. Ibis Technology Corp. SemiconductorsElectronic Technology Ibis Technology Corp. develops, manufactures and markets SIMOX-SOI implantation equipment for the worldwide semiconductor industry. SIMOX creates an insulating oxide barrier below the top surface of a silicon wafer through implantation and annealing. The company's proprietary oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a very thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. It was founded in October 1987.	Presidente	30/11/2007
AZENTA, INC.	Direttore Tecnico/Scientifico/R&S	01/01/2003

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AZENTA, INC.	Health Services

Aziende private	1
Ibis Technology Corp. Ibis Technology Corp. SemiconductorsElectronic Technology Ibis Technology Corp. develops, manufactures and markets SIMOX-SOI implantation equipment for the worldwide semiconductor industry. SIMOX creates an insulating oxide barrier below the top surface of a silicon wafer through implantation and annealing. The company's proprietary oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a very thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. It was founded in October 1987.	Electronic Technology