Yuri Erokhin
Nessuna posizione attualmente
Profilo
Yuri Erokhin worked as a Vice President at Ibis Technology Corp.
and IPG Photonics Corp.
He graduated from Moscow Institute of Physics & Technology with a graduate degree and received a doctorate from Russian Academy of Sciences.
Precedenti posizioni note di Yuri Erokhin
| Società | Posizione | Fine |
|---|---|---|
| IPG PHOTONICS CORPORATION | Corporate Officer/Principal | - |
Ibis Technology Corp.
 Ibis Technology Corp. SemiconductorsElectronic Technology Ibis Technology Corp. develops, manufactures and markets SIMOX-SOI implantation equipment for the worldwide semiconductor industry. SIMOX creates an insulating oxide barrier below the top surface of a silicon wafer through implantation and annealing. The company's proprietary oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a very thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. It was founded in October 1987. | Corporate Officer/Principal | - |
Formazione di Yuri Erokhin
| Moscow Institute of Physics & Technology | Graduate Degree |
| Russian Academy of Sciences | Doctorate Degree |
Esperienze
Posizioni ricoperte
Attive
Inattive
Società quotate in Borsa
Aziende private
Società collegate
| Società quotate in Borsa | 1 |
|---|---|
| IPG PHOTONICS CORPORATION | Electronic Technology |
| Aziende private | 1 |
|---|---|
Ibis Technology Corp.
Ibis Technology Corp. SemiconductorsElectronic Technology Ibis Technology Corp. develops, manufactures and markets SIMOX-SOI implantation equipment for the worldwide semiconductor industry. SIMOX creates an insulating oxide barrier below the top surface of a silicon wafer through implantation and annealing. The company's proprietary oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a very thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. It was founded in October 1987. | Electronic Technology |
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